BiCMOS Technology and Applications

has limited the application of bipolar technologies. This required that for highaccuracy applications thin film resistors and laser trimming be used for the correction of offset and other errors. BiCMOS technologies, which are emerging ...

Author: Antonio R. Alvarez

Publisher: Springer Science & Business Media

ISBN: 9781461532187

Category: Technology & Engineering

Page: 404

View: 575


BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

Fabrication of SiGe HBT BiCMOS Technology

It is not surprising, therefore, to see SiGe BiCMOS technologies in mass production that range in various applications, such as wireless, storage, and instrumentation [3,4]. SiGe BiCMOS technologies offer the flexibility to be optimized ...

Author: John D. Cressler

Publisher: CRC Press

ISBN: 1420066897

Category: Technology & Engineering

Page: 264

View: 906


SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

High performance BiCMOS Technology and Its Applications to VLSIs

CMOS A / D is good for digital - oriented applications and bipolar A / D is suitable for analog - oriented applications . Hi - BiCMOS A / D is the best approach for medium - range applications when Hi - BiCMOS technology is employed .

Author: Ikurō Masuda

Publisher: Gordon & Breach Science Pub

ISBN: UOM:39015024809777

Category: Technology & Engineering

Page: 85

View: 862


Scaling And Integration Of High speed Electronics And Optomechanical Systems

J.J. Pekarik et al., “A 90nm SiGe BiCMOS Technology for mm- wave and high-performance analog applications”, Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE. P. Chevalier et al., “A 55 nm triple gate oxide 9 metal layers ...

Author: Willander Magnus

Publisher: World Scientific

ISBN: 9789813225411

Category: Technology & Engineering

Page: 152

View: 885


Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems. Contents: PrefaceScaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)Author Index Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.

Digital BiCMOS Integrated Circuit Design

Many types of adders have been implemented in CMOS technology. The application of BiCMOS technology to adders has resulted in high performance circuits. In this section, we study different adder implementations for CMOS, ...

Author: Sherif H.K. Embabi

Publisher: Springer Science & Business Media

ISBN: 9781461531746

Category: Technology & Engineering

Page: 398

View: 632


Digital BiCMOS Integrated Circuit Design is the first book devoted entirely to the analysis and design of digital BiCMOS integrated circuits. BiCMOS Integrated Circuit Design also reviews CMOS and CML integrated circuit design. The application of BiCMOS in the design of digital subsystems, e.g. adders, multipliers, RAMs and PLAs is addressed. The book also introduces the reader to IC process technology: CMOS, bipolar and BiCMOS. The modeling of both the bipolar and MOS devices are covered. Many process/device/circuit design issues are discussed. Digital BiCMOS Integrated Circuit Design can be used by engineers, researchers, graduate and senior undergraduate students working in the area of digital integrated circuits, digital circuits and system design, BiCMOS process and device modeling.

Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits

Early SiGe products include chip sets for wireless cellular handsets and base stations [4,5], wirelesslocal area network (WLAN), high-speed, high-capacity wired network applications and many other applications. SiGe BiCMOS technology ...

Author: G.A. Armstrong

Publisher: IET

ISBN: 9780863417436

Category: Technology & Engineering

Page: 443

View: 469


The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

High Speed Devices and Circuits with THz Applications

Technology. and. Devices. Edward. Preisler. and. Marco. Racanelli. CONTENTS 3.1 Introduction . ... In this chapter, we will review SiGe BiCMOS technology and its most significant applications. First, we will provide a basic ...

Author: Jung Han Choi

Publisher: CRC Press

ISBN: 9781466590120

Category: Science

Page: 261

View: 622


Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

High Speed and Lower Power Technologies

However two analog applications have emerged which have subsequently driven the market and roadmap for SiGe BiCMOS technologies over the intervening two decades: commercial RF applications and high-speed wireline applications.

Author: Jung Han Choi

Publisher: CRC Press

ISBN: 9781351242271

Category: Technology & Engineering

Page: 358

View: 486


This book explores up-to-date research trends and achievements on low-power and high-speed technologies in both electronics and optics. It offers unique insight into low-power and high-speed approaches ranging from devices, ICs, sub-systems and networks that can be exploited for future mobile devices, 5G networks, Internet of Things (IoT), and data centers. It collects heterogeneous topics in place to catch and predict future research directions of devices, circuits, subsystems, and networks for low-power and higher-speed technologies. Even it handles about artificial intelligence (AI) showing examples how AI technology can be combined with concurrent electronics. Written by top international experts in both industry and academia, the book discusses new devices, such as Si-on-chip laser, interconnections using graphenes, machine learning combined with CMOS technology, progresses of SiGe devices for higher-speed electronices for optic, co-design low-power and high-speed circuits for optical interconnect, low-power network-on-chip (NoC) router, X-ray quantum counting, and a design of low-power power amplifiers. Covers modern high-speed and low-power electronics and photonics. Discusses novel nano-devices, electronics & photonic sub-systems for high-speed and low-power systems, and many other emerging technologies like Si photonic technology, Si-on-chip laser, low-power driver for optic device, and network-on-chip router. Includes practical applications and recent results with respect to emerging low-power systems. Addresses the future perspective of silicon photonics as a low-power interconnections and communication applications.

Low Power Digital VLSI Design

The BJTs realized in the presented high-performance BiCMOS process have low collector resistance (because of the ... This technology is suitable for 3.3 W power supply voltage and promising for low-power mixed-signal applications.

Author: Abdellatif Bellaouar

Publisher: Springer Science & Business Media

ISBN: 9781461523550

Category: Technology & Engineering

Page: 530

View: 917


Low-Power Digital VLSI Design: Circuits and Systems addresses both process technologies and device modeling. Power dissipation in CMOS circuits, several practical circuit examples, and low-power techniques are discussed. Low-voltage issues for digital CMOS and BiCMOS circuits are emphasized. The book also provides an extensive study of advanced CMOS subsystem design. A low-power design methodology is presented with various power minimization techniques at the circuit, logic, architecture and algorithm levels. Features: Low-voltage CMOS device modeling, technology files, design rules Switching activity concept, low-power guidelines to engineering practice Pass-transistor logic families Power dissipation of I/O circuits Multi- and low-VT CMOS logic, static power reduction circuit techniques State of the art design of low-voltage BiCMOS and CMOS circuits Low-power techniques in CMOS SRAMS and DRAMS Low-power on-chip voltage down converter design Numerous advanced CMOS subsystems (e.g. adders, multipliers, data path, memories, regular structures, phase-locked loops) with several design options trading power, delay and area Low-power design methodology, power estimation techniques Power reduction techniques at the logic, architecture and algorithm levels More than 190 circuits explained at the transistor level.